[1] J. Sun, Y. M. Li, Y. J. Ou, et al. In-memory computing of multilevel ferroelectric domain wall diodes at LiNbO3 interfaces. Adv. Funct. Mater. 202207418 (2022).
[2] W. J. Zhang, C. Wang, J. Jiang, et al. Fast Operations of Nonvolatile Ferroelectric Domain Wall Memory with Inhibited Space Charge Injection. ACS Applied Materials& Interfaces. (2022).
[3] X. Zhuang, C. Wang, A. Q. Jiang, The technique to symmetrize domain switching hysteresis loops in LiNbO domain-wall nanodevices with improved polarization retention. Appl. Phys. Lett.120, 243505 (2022)
[4] J. Jiang, C. Wang, X.J. Chai, et al. Surface-Bound Domain Penetration and Large Wall Current. Adv. Electron. Mater. 7, 2000720 (2021).
[5] J. W. Lian, X.J. Chai, C. Wang, et al. Sub 20 nm-Node LiNbO3 Domain-Wall Memory. Adv. Mater. Technol. 2001219 (2021).
[6] A.Q. Jiang, W.P. Geng, P. Lv, et al. Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers. Nat. Mater. (2020).
[7] X. Chai, J. Jiang, Q. Zhang, Q. et al. Nonvolatile ferroelectric field-effect transistors. Nat Commun.11, 2811 (2020).
[8]C. Wang, J. jiang, X.J. Chai,et al.Energy-efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics. ACS Applied Materials& Interfaces. (2020)
[9] J. Jiang, Z. L. Bai, Z. H. Chen, L. He, D. W. Zhang, Q. H. Zhang, J. A. Shi, M. H. Park, J. F. Scott, C. S. Hwang and A. Q. Jiang*, “Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories”, Nat. Mater. 17, 49-57 (2018).
[10] Z. L. Bai, X. X. Cheng, D. F. Chen, D. W. Zhang, L. Q. Chen, J. F. Scott, C. S. Hwang*, and A. Q. Jiang*, “Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films”, Adv. Funct. Mater. 18, 01725 (2018).
[11] An Quan Jiang, Xiang Jian Meng, David Wei Zhang, Min Hyuk Park, Sijung Yoo, Yu Jin Kim, James F. Scott* & Cheol Seong Hwang*, “Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong”, Scientific Reports 5, 14618 (2015).
[12] A.Q. Jiang*, H.J. Lee, C.S. Hwang, and J.F. Scott, “Sub-picosecond processes of ferroelectric domain switching from field and temperature experiments”, Adv. Funct. Mater. 22, 192–199 (2012).
[13] An Quan Jiang*, Mr. Zhi Hui Chen, Mr. Wen Yuan Hui, Prof. Dong Ping Wu, Prof. James F. Scott 'Subpicosecond Domain Switching in Discrete Regions of Pb(Zr0.35Ti0.65)O3 Thick Films ' Adv. Funct. Mater., 22, 2148–2153 (2012).
[14] A.Q. Jiang*, C. Wang , K.J. Jin , X.B. Liu , J. F. Scott , C.S. Hwang , T. A. Tang , H. B. Lu , and G. Z. Yang, “A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors”, Adv. Mater. 23, 1277–1281 (2011).
[15] A. Q. Jiang, H. J. Lee, G. H. Kim, and C.S. Hwang*, The inlaid Al2O3 tunnel switch for ultra-thin ferroelectric films, Adv. Mater. 21, 2870-2875 (2009).